• Manufacturer
  • Diode Type
  • Supplier Device Package
Found: 1755
  • DIODE GEN PURP 80V 200MA SC79-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: PG-SC79-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 200mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 1µA @ 75V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • PIN DIODE, 50V V(BR)
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323-3
    • Diode Type: PIN - 1 Pair Common Cathode
    • Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
    • Current - Max: 100mA
    • Power Dissipation (Max): 250mW
    • Voltage - Peak Reverse (Max): 50V
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  • RF DIODE PIN 50V SC79-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: Automotive, AEC-Q101
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: PG-SC79-2-1
    • Diode Type: PIN - Single
    • Capacitance @ Vr, F: 0.6pF @ 10V, 1MHz
    • Current - Max: 50mA
    • Voltage - Peak Reverse (Max): 50V
    • Resistance @ If, F: 7Ohm @ 10mA, 100MHz
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  • IDW40G65 - COOLSIC SCHOTTKY DIOD
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: PG-TO247-3-41
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 210µA @ 650V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 20A (DC)
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  • DIODE GEN PURP 700V 2450A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AB, B-PUK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 700V
    • Current - Average Rectified (Io): 2450A
    • Voltage - Forward (Vf) (Max) @ If: 880mV @ 2000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 50mA @ 700V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • DIODE GEN PURP 600V 30A TO247-3
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE SCHOTTKY 650V 27A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 27A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 12A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 40µA @ 420V
    • Capacitance @ Vr, F: 594pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: PG-SOT323-3
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 25V
    • Voltage - Forward (Vf) (Max) @ If: 950mV @ 35mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 150nA @ 25V
    • Operating Temperature - Junction: 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 100mA (DC)
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  • RECTIFIER DIODE, SCHOTTKY
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 40V
    • Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 30V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 120mA
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  • DIODE SCHOTTKY 1200V 2A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 2A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.8V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 48µA @ 1200V
    • Capacitance @ Vr, F: 125pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE SCHOTTKY 600V 6A TO220AB
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-3
    • Supplier Device Package: PG-TO220-3-1
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE ARRAY SCHOTTKY 30V SOT23
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 30V
    • Voltage - Forward (Vf) (Max) @ If: 800mV @ 100mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 5ns
    • Current - Reverse Leakage @ Vr: 2µA @ 25V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 1 Pair Common Anode
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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  • DIODE GEN PURP 4.5KV 200A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4500V
    • Current - Average Rectified (Io): 200A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 30mA @ 4500V
    • Operating Temperature - Junction: -40°C ~ 160°C
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  • DIODE STANDAR 30V 100MW SOT343-4
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: PG-SOT343-3D
    • Diode Type: Standard - Single
    • Capacitance @ Vr, F: 0.9pF @ 3V, 1MHz
    • Current - Max: 100mA
    • Power Dissipation (Max): 100mW
    • Voltage - Peak Reverse (Max): 30V
    • Resistance @ If, F: 1Ohm @ 5mA, 100MHz
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  • DIODE GP 650V 28A TO220-2FP
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2 Full Pack
    • Supplier Device Package: PG-TO220-2 Full Pack
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 28A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 42ns
    • Current - Reverse Leakage @ Vr: 40µA @ 650V
    • Operating Temperature - Junction: -40°C ~ 175°C
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