• Manufacturer
  • Diode Type
  • Supplier Device Package
Found: 1755
  • DIODE VARIABLE 30V 20MA SC-79
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: PG-SC79-2
    • Diode Type: Single
    • Capacitance @ Vr, F: 2.75pF @ 28V, 1MHz
    • Voltage - Peak Reverse (Max): 30V
    • Capacitance Ratio: 15.3
    • Capacitance Ratio Condition: C1/C28
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  • DIODE GEN PURP 1.8KV 1230A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AA, A-PUK
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1800V
    • Current - Average Rectified (Io): 1230A
    • Voltage - Forward (Vf) (Max) @ If: 1.063V @ 800A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 50mA @ 1800V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • DIODE GEN PURP 80V 200MA SC79-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: PG-SC79-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Current - Average Rectified (Io): 200mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 1µA @ 75V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: 150°C (Max)
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  • DIODE GEN PURP 2KV 255A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Stud Mount
    • Package / Case: DO-205AA, DO-8, Stud
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 2000V
    • Current - Average Rectified (Io): 255A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 30mA @ 2000V
    • Operating Temperature - Junction: -40°C ~ 180°C
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  • VARIABLE CAPACITANCE DIODE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-70, SOT-323
    • Supplier Device Package: SOT-323
    • Diode Type: 1 Pair Common Cathode
    • Capacitance @ Vr, F: 13.5pF @ 4.5V, 1MHz
    • Voltage - Peak Reverse (Max): 12V
    • Capacitance Ratio: 5.41
    • Capacitance Ratio Condition: C1/C4.5
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  • DIODE SWITCHING 600V WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Die
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 30A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 30A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: DD171N
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1600V
    • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 500A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 20mA @ 1600V
    • Operating Temperature - Junction: 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 171A
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  • VARIABLE CAPACITANCE DIODE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-80
    • Supplier Device Package: SCD-80
    • Diode Type: Single
    • Capacitance @ Vr, F: 2.2pF @ 28V, 1MHz
    • Voltage - Peak Reverse (Max): 30V
    • Capacitance Ratio: 11
    • Capacitance Ratio Condition: C1/C28
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  • DIODE MODULE GP 1400V 89A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1400V
    • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 300A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 20mA @ 1400V
    • Operating Temperature - Junction: -40°C ~ 150°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 89A
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  • DIODE GP 1.2KV 350A BG-PB50ND-1
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: BG-PB50ND-1
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Current - Average Rectified (Io): 350A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 30mA @ 1200V
    • Operating Temperature - Junction: -40°C ~ 135°C
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  • DIODE SCHOTTKY 4V 110MA TSSLP-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 0201 (0603 Metric)
    • Supplier Device Package: PG-TSSLP-2-3
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 4V
    • Current - Average Rectified (Io): 110mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 410mV @ 10mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Current - Reverse Leakage @ Vr: 5µA @ 1V
    • Capacitance @ Vr, F: 350pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 150°C
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  • DIODE CHIP EMITTER CONTROLLED
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • PIN DIODE, 50V V(BR)
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-76, SOD-323
    • Supplier Device Package: PG-SOD323-2
    • Diode Type: PIN - Single
    • Capacitance @ Vr, F: 0.3pF @ 5V, 1MHz
    • Current - Max: 100mA
    • Power Dissipation (Max): 250mW
    • Voltage - Peak Reverse (Max): 50V
    • Resistance @ If, F: 1Ohm @ 10mA, 100MHz
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  • DIODE TUNING 7V 20MA TSLP-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SOD-882
    • Supplier Device Package: PG-TSLP-2-1
    • Diode Type: Single
    • Capacitance @ Vr, F: 1.45pF @ 4V, 1MHz
    • Voltage - Peak Reverse (Max): 7V
    • Capacitance Ratio: 2.1
    • Capacitance Ratio Condition: C1/C4
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  • DIODE GEN PURP 4.5KV 1630A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AD
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4500V
    • Current - Average Rectified (Io): 1630A
    • Voltage - Forward (Vf) (Max) @ If: 2.6V @ 2500A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100mA @ 4500V
    • Operating Temperature - Junction: -40°C ~ 140°C
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