• Manufacturer
  • Diode Type
  • Supplier Device Package
Found: 1755
  • DIODE TUNING 30V 20MA SCD80
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-80
    • Supplier Device Package: SCD-80
    • Diode Type: Single
    • Capacitance @ Vr, F: 0.52pF @ 28V, 1MHz
    • Voltage - Peak Reverse (Max): 30V
    • Capacitance Ratio: 12.7
    • Capacitance Ratio Condition: C1/C28
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  • DIODE ARRAY GP 80V 200MA SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 150nA @ 70V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 2 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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  • RF DIODE STANDARD 35V SCD80
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Operating Temperature: 150°C (TJ)
    • Package / Case: SC-80
    • Supplier Device Package: SCD-80
    • Diode Type: Standard - Single
    • Capacitance @ Vr, F: 1.1pF @ 3V, 1MHz
    • Current - Max: 100mA
    • Voltage - Peak Reverse (Max): 35V
    • Resistance @ If, F: 500mOhm @ 10mA, 100MHz
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  • DIODE GEN PURP 4KV 4870A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: DO-200AE
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 4000V
    • Current - Average Rectified (Io): 4870A
    • Voltage - Forward (Vf) (Max) @ If: 1.27V @ 4000A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 100mA @ 4000V
    • Operating Temperature - Junction: -40°C ~ 160°C
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  • DIODE GEN PURP 600V 14.7A TO220
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 14.7A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 2V @ 6A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 70ns
    • Current - Reverse Leakage @ Vr: 50µA @ 600V
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE ARRAY SCHOTTKY 70V SOT343
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: SC-82A, SOT-343
    • Supplier Device Package: PG-SOT343-4-1
    • Diode Type: Schottky
    • Voltage - DC Reverse (Vr) (Max): 70V
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 100ps
    • Current - Reverse Leakage @ Vr: 100nA @ 50V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 2 Independent
    • Current - Average Rectified (Io) (per Diode): 70mA (DC)
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  • DIODE TUNING 30V 20MA SC79
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Operating Temperature: -55°C ~ 150°C (TJ)
    • Package / Case: SC-79, SOD-523
    • Supplier Device Package: PG-SC79-2
    • Diode Type: Single
    • Capacitance @ Vr, F: 2.9pF @ 28V, 1MHz
    • Voltage - Peak Reverse (Max): 30V
    • Capacitance Ratio: 23.2
    • Capacitance Ratio Condition: C1/C28
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  • SILICON SWITCHING DIODE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: TO-236-3, SC-59, SOT-23-3
    • Supplier Device Package: PG-SOT23
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 50V
    • Current - Average Rectified (Io): 250mA (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 100nA @ 50V
    • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
    • Operating Temperature - Junction: -65°C ~ 150°C
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  • DIODE MODULE GP 100V 96A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Chassis Mount
    • Package / Case: Module
    • Supplier Device Package: Module
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 100V
    • Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
    • Speed: Standard Recovery >500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 40mA @ 100V
    • Operating Temperature - Junction: -40°C ~ 150°C
    • Diode Configuration: 1 Pair Series Connection
    • Current - Average Rectified (Io) (per Diode): 96A
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  • VARIABLE CAPACITANCE DIODE
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE ARRAY GP 80V 200MA SOT363
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: 6-VSSOP, SC-88, SOT-363
    • Supplier Device Package: PG-SOT363-PO
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 80V
    • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
    • Speed: Small Signal =< 200mA (Io), Any Speed
    • Reverse Recovery Time (trr): 4ns
    • Current - Reverse Leakage @ Vr: 150nA @ 70V
    • Operating Temperature - Junction: 150°C (Max)
    • Diode Configuration: 2 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 200mA (DC)
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  • DIODE SCHOTTKY 600V 6A TO220-2
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Through Hole
    • Package / Case: TO-220-2
    • Supplier Device Package: PG-TO220-2-2
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 6A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 200µA @ 600V
    • Capacitance @ Vr, F: 300pF @ 0V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE ARRAY MOD 1200V 140A
    Infineon Technologies
    • Manufacturer: Infineon Technologies
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  • DIODE SCHOTTKY 650V 2A VSON-4
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Series: CoolSiC™+
    • Mounting Type: Surface Mount
    • Package / Case: 4-PowerTSFN
    • Supplier Device Package: PG-VSON-4
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Current - Average Rectified (Io): 2A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 35µA @ 650V
    • Capacitance @ Vr, F: 70pF @ 1V, 1MHz
    • Operating Temperature - Junction: -55°C ~ 175°C
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  • DIODE GEN PURP 600V 9A WAFER
    Infineon Technologies
    • Manufacturer: Infineon Technologies
    • Mounting Type: Surface Mount
    • Package / Case: Die
    • Supplier Device Package: Sawn on foil
    • Diode Type: Standard
    • Voltage - DC Reverse (Vr) (Max): 600V
    • Current - Average Rectified (Io): 9A (DC)
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 9A
    • Speed: Fast Recovery =< 500ns, > 200mA (Io)
    • Current - Reverse Leakage @ Vr: 27µA @ 600V
    • Operating Temperature - Junction: -40°C ~ 150°C
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