• Configuration
    • Technology
    • Operating Temperature
    • Speed
    • Power - Max
    • Voltage - Zener (Nom) (Vz)
    • Impedance (Max) (Zzt)
    • Current - Reverse Leakage @ Vr
    • Current - Max
    • Capacitance @ Vr, F
    • Voltage - Forward (Vf) (Max) @ If
    • Power Dissipation (Max)
    • Resistance @ If, F
    • Capacitance Ratio
    • Voltage - DC Reverse (Vr) (Max)
    • Reverse Recovery Time (trr)
    • Operating Temperature - Junction
    • Diode Configuration
    • Capacitance Ratio Condition
    • Q @ Vr, F
    • Current - Average Rectified (Io) (per Diode)
    • Series
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List Table
Found: 33
  • G3S12040B
    SIC SCHOTTKY DIODE 1200V 40A 3-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 64.5A (DC)
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  • G4S12040BM
    SIC SCHOTTKY DIODE 1200V 40A 3-P
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 1200V
    • Voltage - Forward (Vf) (Max) @ If: 1.6V @ 20A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 30µA @ 1200V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 64.5A (DC)
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  • G3S06504B
    SIC SCHOTTKY DIODE 650V 4A 3-PIN
    Global Power Technology-GPT
    • Manufacturer: Global Power Technology-GPT
    • Mounting Type: Through Hole
    • Package / Case: TO-247-3
    • Supplier Device Package: TO-247AB
    • Diode Type: Silicon Carbide Schottky
    • Voltage - DC Reverse (Vr) (Max): 650V
    • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
    • Speed: No Recovery Time > 500mA (Io)
    • Reverse Recovery Time (trr): 0ns
    • Current - Reverse Leakage @ Vr: 50µA @ 650V
    • Operating Temperature - Junction: -55°C ~ 175°C
    • Diode Configuration: 1 Pair Common Cathode
    • Current - Average Rectified (Io) (per Diode): 9A (DC)
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