Diodes Global Power Technology-GPT

Diodes - RF 0
Diodes - Rectifiers - Arrays 184
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

Manufacturer
Diode Type
Supplier Device Package
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 184

G5S12002H

SIC SCHOTTKY DIODE 1200V 2A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 7.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S06506DT

SIC SCHOTTKY DIODE 650V 6A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GAS06520L

SIC SCHOTTKY DIODE 650V 20A 3-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 66.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12015P

SIC SCHOTTKY DIODE 1200V 15A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 42A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 1379pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12010P

SIC SCHOTTKY DIODE 1200V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 37A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 110A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 765pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S06506HT

SIC SCHOTTKY DIODE 650V 6A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 18.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S6506Z

SIC SCHOTTKY DIODE 650V 6A DFN5*

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: 8-PowerTDFN
- Supplier Device Package: 8-DFN (4.9x5.75)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 30.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06506CT

SIC SCHOTTKY DIODE 650V 6A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 13.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 181pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12002C

SIC SCHOTTKY DIODE 1200V 2A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 8.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S12016BM

SIC SCHOTTKY DIODE 1200V 16A 3-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 27.9A (DC)
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G4S06530BT

SIC SCHOTTKY DIODE 650V 30A 3-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 39A (DC)
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G4S12010PM

SIC SCHOTTKY DIODE 1200V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 33.2A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1700V
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S12015PM

SIC SCHOTTKY DIODE 1200V 15A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 55A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 1370pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06504D

SIC SCHOTTKY DIODE 650V 4A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 11.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 181pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06508HT

SIC SCHOTTKY DIODE 650V 8A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 18.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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