Diodes Global Power Technology-GPT

Diodes - RF 0
Diodes - Rectifiers - Arrays 184
Diodes - Bridge Rectifiers 0
Diodes - Zener - Arrays 0
Diodes - Variable Capacitance (Varicaps, Varactors) 0

Manufacturer
Diode Type
Supplier Device Package
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 184

G4S12020BM

SIC SCHOTTKY DIODE 1200V 20A 3-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.6V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 30µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 33.2A (DC)
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G3S06506C

SIC SCHOTTKY DIODE 650V 6A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 22.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 6A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 424pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G4S06510PT

SIC SCHOTTKY DIODE 650V 10A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 31.2A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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GAS06520A

SIC SCHOTTKY DIODE 650V 20A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 66A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 1390pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S17005C

SIC SCHOTTKY DIODE 1700V 5A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 27A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1700V
- Capacitance @ Vr, F: 780pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S12010A

SIC SCHOTTKY DIODE 1200V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 37A (DC)
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S06505DT

SIC SCHOTTKY DIODE 650V 5A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 395pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G5S06508QT

SIC SCHOTTKY DIODE 650V 8A DFN8*

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: 4-PowerTSFN
- Supplier Device Package: 4-DFN (8x8)
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 44.9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06508J

SIC SCHOTTKY DIODE 650V 8A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Isolated Tab
- Supplier Device Package: TO-220ISO
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 23A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 550pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06502H

SIC SCHOTTKY DIODE 650V 2A 2-PIN

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 9A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 123pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12005H

SIC SCHOTTKY DIODE 1200V 5A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2 Full Pack
- Supplier Device Package: TO-220F
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 21A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 5A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Capacitance @ Vr, F: 475pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S06520A

SIC SCHOTTKY DIODE 650V 20A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 56.5A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 1170pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S12004B

SIC SCHOTTKY DIODE 1200V 4A 3-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AB
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 2A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 1200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 8.5A (DC)
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G4S06515CT

SIC SCHOTTKY DIODE 650V 15A 2-PI

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 650V
- Current - Average Rectified (Io): 35.8A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 50µA @ 650V
- Capacitance @ Vr, F: 645pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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G3S17010A

SIC SCHOTTKY DIODE 1700V 10A 2-P

Global Power Technology-GPT
- Manufacturer: Global Power Technology-GPT
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: TO-220AC
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1700V
- Current - Average Rectified (Io): 24A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.7V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 100µA @ 1700V
- Capacitance @ Vr, F: 1500pF @ 0V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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