Diodes GeneSiC Semiconductor

Manufacturer
Diode Type
Supplier Device Package
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series

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List Table

Found: 2090

MBRTA600150

DIODE SCHOTTKY 150V 300A 3TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 300A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 4mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 300A
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MBR8045

DIODE SCHOTTKY 45V 80A DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 45V
- Current - Average Rectified (Io): 80A
- Voltage - Forward (Vf) (Max) @ If: 650mV @ 80A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 45V
- Operating Temperature - Junction: -55°C ~ 150°C
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1N2137A

DIODE GEN PURP 500V 60A DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 500V
- Current - Average Rectified (Io): 60A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 50V
- Operating Temperature - Junction: -65°C ~ 200°C
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MBR3580R

DIODE SCHOTTKY REV 80V DO4

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Diode Type: Schottky, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 35A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 35A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1.5mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
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MBRF20020R

DIODE SCHOTTKY 150V 100A TO244AB

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 150V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 150V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 100A
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MBR12060CT

DIODE MODULE 60V 120A 2TOWER

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 60V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 120A (DC)
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FR40D02

DIODE GEN PURP 200V 40A DO5

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 40A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Operating Temperature - Junction: -40°C ~ 125°C
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MURF10040

DIODE MODULE 400V 50A TO244AB

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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MURF20040R

DIODE MODULE 400V 100A TO244AB

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 100A
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1N3289AR

DIODE GEN PURP 200V 100A DO205AA

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-205AA, DO-8, Stud
- Supplier Device Package: DO-205AA (DO-8)
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 24mA @ 200V
- Operating Temperature - Junction: -40°C ~ 200°C
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FR12BR02

DIODE GEN PURP REV 100V 12A DO4

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-4
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 100V
- Current - Average Rectified (Io): 12A
- Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 200ns
- Current - Reverse Leakage @ Vr: 25µA @ 100V
- Operating Temperature - Junction: -65°C ~ 150°C
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MBR2X120A080

DIODE SCHOTTKY 80V 120A SOT227

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 120A
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MURF40040R

DIODE GEN PURP 400V 200A TO244

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 180ns
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 200A
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MBRH24080R

DIODE SCHOTTKY 80V 240A D67

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: D-67
- Supplier Device Package: D-67
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io): 240A
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 240A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
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W02M

BRIDGE RECT 1PHASE 200V 1.5A WOM

GeneSiC Semiconductor
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -65°C ~ 125°C (TJ)
- Package / Case: 4-Circular, WOM
- Supplier Device Package: WOM
- Diode Type: Single Phase
- Current - Average Rectified (Io): 1.5A
- Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
- Current - Reverse Leakage @ Vr: 10µA @ 200V
- Technology: Standard
- Voltage - Peak Reverse (Max): 200V
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