- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 30A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 30A
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard, Reverse Polarity
- Voltage - DC Reverse (Vr) (Max): 400V
- Voltage - Forward (Vf) (Max) @ If: 1.35V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 90ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 50A
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 4-SIP, GBU
- Supplier Device Package: GBU
- Diode Type: Single Phase
- Current - Average Rectified (Io): 8A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 8A
- Current - Reverse Leakage @ Vr: 5µA @ 400V
- Technology: Standard
- Voltage - Peak Reverse (Max): 400V
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 100V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 160A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 100V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 160A
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 50V
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 50A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 75ns
- Current - Reverse Leakage @ Vr: 25µA @ 50V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 50A
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 80V
- Voltage - Forward (Vf) (Max) @ If: 840mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 80V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 300A
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- Manufacturer: GeneSiC Semiconductor
- Series: SiC Schottky MPS™
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 50A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 10µA @ 1200V
- Capacitance @ Vr, F: 660pF @ 1V, 1MHz
- Operating Temperature - Junction: -55°C ~ 175°C
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AB, DO-5, Stud
- Supplier Device Package: DO-5
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 70A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 70A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Operating Temperature - Junction: -65°C ~ 180°C
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Through Hole
- Operating Temperature: -55°C ~ 150°C (TJ)
- Package / Case: 4-EDIP (0.321", 8.15mm)
- Supplier Device Package: DB
- Diode Type: Single Phase
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
- Current - Reverse Leakage @ Vr: 10µA @ 100V
- Technology: Standard
- Voltage - Peak Reverse (Max): 100V
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Twin Tower
- Supplier Device Package: Twin Tower
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 40V
- Voltage - Forward (Vf) (Max) @ If: 750mV @ 250A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 20V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 250A
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
- Diode Type: Three Phase
- Current - Average Rectified (Io): 100A
- Voltage - Forward (Vf) (Max) @ If: 1.15V @ 100A
- Current - Reverse Leakage @ Vr: 10mA @ 600V
- Technology: Standard
- Voltage - Peak Reverse (Max): 600V
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: TO-244AB
- Supplier Device Package: TO-244AB
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 35V
- Voltage - Forward (Vf) (Max) @ If: 700mV @ 60A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 1mA @ 35V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Anode
- Current - Average Rectified (Io) (per Diode): 60A
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- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: Three Tower
- Supplier Device Package: Three Tower
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600V
- Voltage - Forward (Vf) (Max) @ If: 1.2V @ 400A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 25µA @ 600V
- Operating Temperature - Junction: -55°C ~ 150°C
- Diode Configuration: 1 Pair Common Cathode
- Current - Average Rectified (Io) (per Diode): 400A (DC)
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-
- Manufacturer: GeneSiC Semiconductor
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 120V
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 120A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Current - Reverse Leakage @ Vr: 3mA @ 120V
- Operating Temperature - Junction: -40°C ~ 150°C
- Diode Configuration: 2 Independent
- Current - Average Rectified (Io) (per Diode): 120A
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- Offers in stock:
- 10
- 15
- 50
- 100