- Manufacturer
- Diode Type
- Supplier Device Package
-
- Configuration
- Technology
- Operating Temperature
- Speed
- Power - Max
- Voltage - Zener (Nom) (Vz)
- Impedance (Max) (Zzt)
- Current - Reverse Leakage @ Vr
- Current - Max
- Capacitance @ Vr, F
- Voltage - Forward (Vf) (Max) @ If
- Power Dissipation (Max)
- Resistance @ If, F
- Capacitance Ratio
- Voltage - DC Reverse (Vr) (Max)
- Reverse Recovery Time (trr)
- Operating Temperature - Junction
- Diode Configuration
- Capacitance Ratio Condition
- Q @ Vr, F
- Current - Average Rectified (Io) (per Diode)
- Series
Partnumber | Description | Manufacturer
|
Package / Case
|
Voltage - Peak Reverse (Max)
|
Current - Average Rectified (Io)
|
Diode Type
|
Mounting Type
|
Supplier Device Package
|
Technology
|
Operating Temperature
|
Speed
|
Current - Reverse Leakage @ Vr
|
Current - Max
|
Capacitance @ Vr, F
|
Voltage - Forward (Vf) (Max) @ If
|
Voltage - DC Reverse (Vr) (Max)
|
Reverse Recovery Time (trr)
|
Operating Temperature - Junction
|
Diode Configuration
|
Current - Average Rectified (Io) (per Diode)
|
Series
|
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
MUR2X030A04 | DIODE GEN PURP 400V 30A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Standard | Chassis Mount | SOT-227 | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 400V | 1.3V @ 30A | 400V | -55°C ~ 175°C | 2 Independent | 30A | ||||||||
MURT10020 | DIODE ARRAY GP 200V 50A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 200V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A | |||||||
MURT10040R | DIODE ARRAY GP REV POLAR3TOWER | GeneSiC Semiconductor | Three Tower | Standard, Reverse Polarity | Chassis Mount | Three Tower | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.35V @ 50A | 400V | 90ns | -55°C ~ 150°C | 1 Pair Common Anode | 50A | |||||||
GBU8G | BRIDGE RECT 1PHASE 400V 8A GBU | GeneSiC Semiconductor | 4-SIP, GBU | 400V | 8A | Single Phase | Through Hole | GBU | Standard | -55°C ~ 150°C (TJ) | 5µA @ 400V | 1.1V @ 8A | |||||||||
MBR2X160A100 | DIODE SCHOTTKY 100V 160A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 100V | 840mV @ 160A | 100V | -40°C ~ 150°C | 2 Independent | 160A | ||||||||
MURF10005 | DIODE MODULE 50V 50A TO244 | GeneSiC Semiconductor | TO-244AB | Standard | Chassis Mount | TO-244 | Fast Recovery =< 500ns, > 200mA (Io) | 25µA @ 50V | 1.3V @ 50A | 50V | 75ns | -55°C ~ 150°C | 1 Pair Common Cathode | 50A | |||||||
MBRF60080R | DIODE SCHOTTKY 80V 300A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 80V | 840mV @ 250A | 80V | -55°C ~ 150°C | 1 Pair Common Anode | 300A | ||||||||
GC10MPS12-252 | SIC DIODE 1200V 10A TO-252-2 | GeneSiC Semiconductor | TO-252-3, DPak (2 Leads + Tab), SC-63 | 50A (DC) | Silicon Carbide Schottky | Surface Mount | TO-252-2 | No Recovery Time > 500mA (Io) | 10µA @ 1200V | 660pF @ 1V, 1MHz | 1.8V @ 10A | 1200V | 0ns | -55°C ~ 175°C | SiC Schottky MPS™ | ||||||
S70K | DIODE GEN PURP 800V 70A DO5 | GeneSiC Semiconductor | DO-203AB, DO-5, Stud | 70A | Standard | Chassis, Stud Mount | DO-5 | Standard Recovery >500ns, > 200mA (Io) | 10µA @ 100V | 1.1V @ 70A | 800V | -65°C ~ 180°C | |||||||||
DB102G | BRIDGE RECT 1PHASE 100V 1A DB | GeneSiC Semiconductor | 4-EDIP (0.321", 8.15mm) | 100V | 1A | Single Phase | Through Hole | DB | Standard | -55°C ~ 150°C (TJ) | 10µA @ 100V | 1.1V @ 1A | |||||||||
MBR50040CTR | DIODE MODULE 40V 250A 2TOWER | GeneSiC Semiconductor | Twin Tower | Schottky | Chassis Mount | Twin Tower | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 20V | 750mV @ 250A | 40V | -55°C ~ 150°C | 1 Pair Common Anode | 250A | ||||||||
M3P100A-60 | BRIDGE RECT 3P 600V 100A MODULE | GeneSiC Semiconductor | Module | 600V | 100A | Three Phase | Chassis Mount | Module | Standard | 10mA @ 600V | 1.15V @ 100A | ||||||||||
MBRF12035R | DIODE SCHOTTKY 35V 60A TO244AB | GeneSiC Semiconductor | TO-244AB | Schottky | Chassis Mount | TO-244AB | Fast Recovery =< 500ns, > 200mA (Io) | 1mA @ 35V | 700mV @ 60A | 35V | -55°C ~ 150°C | 1 Pair Common Anode | 60A | ||||||||
MSRTA40060A | DIODE MODULE 600V 400A 3TOWER | GeneSiC Semiconductor | Three Tower | Standard | Chassis Mount | Three Tower | Standard Recovery >500ns, > 200mA (Io) | 25µA @ 600V | 1.2V @ 400A | 600V | -55°C ~ 150°C | 1 Pair Common Cathode | 400A (DC) | ||||||||
MBR2X120A120 | DIODE SCHOTTKY 120V 120A SOT227 | GeneSiC Semiconductor | SOT-227-4, miniBLOC | Schottky | Chassis Mount | SOT-227 | Fast Recovery =< 500ns, > 200mA (Io) | 3mA @ 120V | 880mV @ 120A | 120V | -40°C ~ 150°C | 2 Independent | 120A |
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